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高兴森小组制备与操控BFO纳米电容器

2015/4/16 11:23:35      点击:      发布:管理员
L. N. Zhao, Z. X. Lu, F. Y. Zhang, G. Tian, X. Song, Z. W. Li, K. R. Huang, Z. Zhang, M. H. Qin, S. J. Wu, X. B. Lu, M. Zeng, X. S. Gao(高兴森), J. Y. Dai, and J.-M. Liu


Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrates


Scientific Reports 5, 9680 (2015 April)


纳米电容器能够做什么用我们其实并不是特别清楚与自信,但能够搞出一些简单的方法制备纳米电容器也是很美的事情。这个工作就是玩出了一种简单方法。BFO铁电性能很棒,因此是制备铁电纳米电容器的良好体系。高兴森老师看起来有了一些进展,虽然花费好像不菲。

为了做这个文章,第一作者带伤攻关、高兴森老师也是带病工作,值得赞许。

Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO3 nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO3/SrRuO3 (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO3 (Nb-STO) substrates with a lateral size of ~60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch2) nonvolatile memories and other oxide nanoelectronic devices.

URL:

http://dx.doi.org/10.1038/srep09680