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2014年研究成果

2015/3/3 14:41:44      点击:      发布:管理员
研究论文(*通讯作者)
(1) B. Han, K. Pei, Y. L. Huang, X. J. Zhang, Q. K. Rong, Q. G. Lin, Y. F. Guo, T. Y. Sun, C. F. Guo, D. Carnahan, J. W. Gao*(高进伟), K. Kempa*, and Z. F. Ren*, Uniform self‐forming metallic network as a high‐performance transparent conductive electrode, Adv. Mat. 26, 980 (2014)(IF 14.8).
(2) B. Han, Y. L. Huang, R. P. Li, Q. Peng, J. Y. Luo, K. Pei, A. Herczynski, K. Kempa, Z. F. Ren, and J. W. Gao*(高进伟), Bio-inspired networks for optoelectronic applications, Nature Comm. 5, 5674 (2014)(IF 10.74).
(3) Z. B. Li, Y. Q. Guan*, and J. M. Liu*(刘俊明), The role of STAT-6 as a key transcription regulator in HeLa cell death induced by IFN-γ/TNF-α co-immobilized on nanoparticles, Biomaterials 35, 5016 (2014)(IF 8.312).
(4) Y. Q. Guan, Z. Zheng, Z. Huang, Z. B. Li, S. Q. Niu, and J. M. Liu*(刘俊明), Powerful inner/outer controlled multi-target magnetic nanoparticle drug carrier prepared by liquid photo-immobilization, Sci. Rep. 4, 4990 (2014)(IF 5.078).
(5) M. H. Qin*(秦明辉), S. Dong, H. B. Zhao, Y. Wang, J. M. Liu, and Z. F. Ren*, Magnetic orders in pnictide superconductors: the effect of biquadratic interaction, New J. Phys. 16, 053027 (2014)(IF 4.06).
(6) Y. B. Lin, Z. B. Yan*, X. B. Lu, Z. X. Lu, M. Zeng, Y. Chen, X. S. Gao*(高兴森), J. G. Wan, J. Y. Dai, and J. M. Liu, Temperature-dependent and polarizationtuned resistive switching inAu/BiFeO3/SrRuO3 junctions, Appl. Phys. Lett. 104, 143503(2014)(IF 3.8).
(7) Y. Zhang, Y. Y. Shao, X. B. Lu* (陆旭兵), M. Zeng, Z. Zhang, X. S. Gao, X. J. Zhang, J. M. Liu*, and J. Y. Dai, Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications, Appl. Phys. Lett. 105, 172902 (2014)(IF 3.8).
(8) C. Liu, Y. Xu, G. Ghibaudo, X. B. Lu(陆旭兵), T. Minari*, and Y. Y. Noh*, Evaluating injection and charge transport properties of organic field-effect
transistors by the convergence point in transfer-length method, Appl. Phys. Lett. 104, 013310 (2014)(IF 3.8).
(9) Q. Miao, M. Zeng, Z. Zhang, X. B. Lu, J. Y. Dai, X. S. Gao*(高兴森), and J. M. Liu*, Self-assembled nanoscale capacitor cells based on ultrathin BiFeO3 films, Appl. Phys. Lett. 104, 182903 (2014)(IF 3.794).
(10) Q. W. Zhou, Z. Zhang*(张璋), S. Senz, F. L. Zhao, L. J. Chen, X. B. Lu, X. S. Gao,and J. M. Liu*, Control of defects in a novel aluminum induced heteroepitaxialgrowth of AlxGal-xPnanocrystals on silicon nanowires, Scr. Mat. 89, 57(2014)(IF 2.8).
(11) J. J. Feng, L. Huo, W. C. Huang, Y. Wang, M. H. Qin*(秦明辉), J. M. Liu*, and Z. F. Ren*, The main 1/2 magnetization plateau in Shastry-Sutherland magnets: Effect of the long-range Ruderman-Kittel-Kasuya-Yosida interaction, EPL 105, 17009 (2014)(IF 2.26).
(12) X. G. Fang, S. X. Lin, M. H. Qin, X. S. Gao, M. Zeng*(曾敏), and J. M. Liu*, Structure, magnetism and spin polarization in (Ni1-xCox)2MnGa alloys: unusual composition dependences, EPL 105, 47010(2014)(IF 2.26).
(13) S. X. Lin, X. G. Fang, A. H. Zhang, X. B. Lu, J. W. Gao, X. S. Gao, M. Zeng*(曾敏), and J. M. Liu*, Uniaxial strain-induced magnetic order transition from E-type to A-type in orthorhombic YMnO3 from first-principles, J. Appl. Phys. 116, 163705 (2014)(IF 2.18).
(14) M. F. Liu, Z. Z. Du, H. M. Liu, X. Li, Z. B. Yan, S. Dong, and J. M. Liu*(刘俊明), Enhanced ferromagnetism, metal-insulator transition, and large magnetoresistance in La1-xCaxMn1-xRuxO3 free of eg-orbital double-exchange, J. Appl. Phys. 115, 123904 (2014)(IF 2.18).
(15) J. P. Chen, Y. L. Xie, P. Chu, Z. Q. Wang, Y. L. Wang, X. S. Gao, and J. M. Liu*(刘俊明), Manipulation of magnetic state in nanostructures by perpendicularanisotropy and magnetic field, J. Appl. Phys. 115, 243910 (2014)(IF 2.18).
(16) A. J. Hong, L. Li, H. X. Zhu, X. H. Zhou, Q. Y. He, W. S. Liu, Z. B. Yan, J. M.
Liu*(刘俊明), and Z. F. Ren, Anomalous transport and thermoelectric performances of CuAgSe compounds, Solid State Ionics 261, 21(2014)(IF 2.046).
(17) W. S. Lin, T. H. Yang, Y. Wang, M. H. Qin* (秦明辉), J. M. Liu, and Z. F. Ren*, Magnetization plateaus of the frustrated IsingShastry-Sutherland system: Wang-Landau simulation, Phys. Lett. A 378, 2565(2014)(IF 1.77).
(18) T. H. Yang, W. S. Lin, X. T. Jia, M. H. Qin*(秦明辉), and J.M. Liu*, Magnetic behaviors of frustrated Ising spin-chain system: Wang-Landau simulation for three-dimensional lattice, Physica A 410, 253 (2014)(IF 1.68).
(19) M. Li, Y. Zhang, Y. Y. Shao, M. Zeng, Z. Zhang, X. S. Gao, X. B. Lu*(陆旭兵), J. M. Liu, and H. Ishiwara, Bi2SiO5 doping concentration effects on the electrical properties of SrBi2Ta2O9 films, J. Electronic Mater. 43, 3625(2014)(IF 1.6).
(20) R. P. Yang, S. X. Lin, X. G. Fang, M. H. Qin, X. S. Gao, M. Zeng*(曾敏), and J. M. Liu, Electronic and magnetic properties of BiFeO3 with intrinsic defects: First-principles prediction, Chin. Phys. B 23, 067102 (2014)(IF 1.3).
(21) F. Zhang, Y. B. Lin, H. Wu, Q. Miao, J. J. Gong, J. P. Chen, S. J. Wu, M. Zeng, X. S. Gao*(高兴森), and J. M. Liu*, Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO3 thin films, Chin. Phys. B 23, 027702(2014)(IF 1.3).
(22) 高兴森*, 曾敏, 刘俊明, 多铁性纳米点结构及微纳器件研究,《物理》43, 246(2014).
申请、获得专利
(1) 王洋、Krzysztof Jan Kempa、任志锋,电极及其制造方法,专利号:US8698267B2,专利授权日:2014年4月15日。